Large Spin Hall Magnetoresistance And Its Correlation

Spin-orbit-derived giant magnetoresistance in a layered magnetic.
Large spin Hall magnetoresistance and its correlation to.
Spin‐Orbit Torque (SOT) Materials and Devices.
Large Magnetoresistance and Spin-Polarized Heavy-Mass.
Spin Filtering Along Chiral Polymers - Mishra - 2020 - Angewandte.
Ultrahigh Spin Filter Efficiency, Giant Magnetoresistance and.
Spin Hall magnetoresistance in paramagnetic NdGaO3.
Giant magnetoresistance and topological Hall effect in the.
Correlation between the spin Hall angle and the structural phases of.
Theory of spin Hall magnetoresistance (SMR) and... - Europe PMC.
Negative spin Hall magnetoresistance of normal metal... - Nature.
Anomalous Hall magnetoresistance in... - AIP Publishing.
Correlation between antisymmetric magnetoresistance and.

Spin-orbit-derived giant magnetoresistance in a layered magnetic.

The finite-temperature violation of the WF correlation is caused by a mismatch between the thermal and electrical summations of the Berry curvature and not by inelastic scattering.... we report a direct experimental observation of large spin Hall and inverse spin Hall effects in the Weyl semimetal WTe2 at room temperature obeying the Onsager. The anomalous Hall effect, magnetoresistance, and saturation magnetization are also all reduced substantially, whereas the sheet resistance is increased in the presence of the spacer layer. Finally, we evidence a correlation between the amplitude of the spin-orbit torques, the spin-Hall-like magnetoresistance, and the perpendicular magnetic.

Large spin Hall magnetoresistance and its correlation to.

The spin currents injected into the F layer and SOTs may be examined by electric measurements through its magnetoresistance and the anomalous Hall effect (AHE). (40) The change of the resistance of the hybrid structure caused by the above effects is referred to as spin Hall magnetoresistance (SMR). Spin dependent conduction and polarization in chiral polymers were studied, when the polymers are organized as self‐assembled monolayers and the conduction is along the polymer backbone, namely along its longer axis. Large spin polarization and magnetoresistance effects were observed, which showed a clear dependence on the secondary structure. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes’ mobilities are both 5000 cm 2 V −1 s −1 at 2 K, which are one of the.

Spin‐Orbit Torque (SOT) Materials and Devices.

An anomalously large spin Hall magnetoresistance (SMR) is found in Co/Pt bilayers. The effective spin Hall angle derived from the SMR approaches 0.4, indicating that the measured SMR includes contribution from other spin dependent effect. Anomalous Spin Hall Magnetoresistance in Pt/Co Bilayers M. Kawaguchi, D. Towa, Y. C. Lau, S. Takahashi, M.

Large Magnetoresistance and Spin-Polarized Heavy-Mass.

Aug 01, 2015 · Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. The report of a systematic study of the magnetoresistance of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to.

Spin Filtering Along Chiral Polymers - Mishra - 2020 - Angewandte.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures Sci. Rep. , 5 ( 2015 ) , pp. 1 - 9 , 10.1038/srep14668 Google Scholar.

Ultrahigh Spin Filter Efficiency, Giant Magnetoresistance and.

Feb 16, 2016 · Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. Cho S, Baek SC, Lee KD, Jo Y, Park BG. Sci Rep, 5:14668, 01 Oct 2015 Cited by: 9 articles | PMID: 26423608 | PMCID: PMC4589767. Free to read & use.

Spin Hall magnetoresistance in paramagnetic NdGaO3.

We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. Feb 21, 2017 · Along with extremely large and nonsaturating magnetoresistance (MR), ∼ 1.4 × 10 5 % at 2 K and 9 T, it shows strong anisotropy, depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. This effect, called spin Hall magneto-resistance (SMR), has been observed in several experiments as a modulation of the MR signal when the magnetization direction of the MI is changed by an external magnetic field. The origin of SMR lies in the electron’s spin-dependent scattering at the NM/MI interface.

Giant magnetoresistance and topological Hall effect in the.

In this brief review, we explain the theoretical basis for the notion that spin-transfer torques (STTs) and giant-magnetoresistance effects can, in principle, occur in circuits containing only normal and antiferromagnetic (AFM) materials, and for the notion that antiferromagnets can play a role in STT phenomena in circuits containing both ferromagnetic and AFM elements. Ing generalized gradient approximation exchange-correlation potential [24] and the FLAPW basis set with the scalar-relativistic scheme and the improved tetrahedron integration method [25]upto16×16 ×12 k-mesh points in the Brillouin zone. The lattice parameters and atomic positions were ﬁxed at their experimental values. The spin-orbit cou. [6] B. G. Park, et al, "A spin-valve like magnetoresistance of an antiferromagnet based tunnel junction", Nature Materials 10, 347 (2011) [7] J. Wunderlich, B. G. Park et al , "Spin Hall effect transistor", Science 300, 1801 (2010).

Correlation between the spin Hall angle and the structural phases of.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. Soonha Cho, Seung-Heon Chris Baek, Kyeong-Dong Lee, Younghun Jo, Byong-Guk Park Scientific Reports 2015, 5: 14668. Request PDF | On Jul 15, 2022, Xing-Guo Ye and others published Orbital polarization and third-order anomalous Hall effect in W Te 2 | Find, read and cite all the research you need on ResearchGate.

Theory of spin Hall magnetoresistance (SMR) and... - Europe PMC.

Jun 29, 2022 · spin Hall magnetoresistance and unidirectional spin Hall magnetoresistance. Fig. 2(b) and Fig. 2(c) represents the angular dependence of the R ω and R 2 ω during the magnetization rotation in the xy-, yz- and xz-planes for the sample with t P t = 4.7 n m. The R ω curves show 180 ° period and typical SMR behavior: R y < R z ≈ R x. The. Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal.

Negative spin Hall magnetoresistance of normal metal... - Nature.

Because of the considerable advantages of functional molecules as well as supramolecules, such as the low cost, light weight, flexibility, and large area preparation via the solution method, molecular electronics has grown into an active and rapidly developing research field over the past few decades. Beyond those well-known advantages, a very long spin relaxation time of π-conjugated.

Anomalous Hall magnetoresistance in... - AIP Publishing.

Magnetoresistance was observed from these structures in the temperature range where the nonlinear Hall resistance occurs.3,5 Because of the strong correlation of the occurrence of the negative magnetoresistance and the nonlinear Hall re-sistance, the observed Hall resistance was explained as an anomalous Hall effect AHE by assuming the existence of.

Correlation between antisymmetric magnetoresistance and.

Of the spin scattering as typically found in a spin-polarized ferromagnetic state. It should be noted that a significant positive MR as large as 50 % at 2 K and 7 T can be found for #2 below 100 K. To get insight into the origin of the remarkable MR in #2, we plot the carrier concentration n dependence of the MR at 9 T, as shown in Fig. 2d.